View DCR1374SBA10_632264.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DCR1374SBA
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1 DS4597-5.2 July 2001
FEATURES
s s s
Double Side Cooling High Surge Capability Low Turn-on Losses
KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt
1800V 2694A 50000A 1000V/s 1000A/s
APPLICATIONS
s s s
High Voltage Power Converters DC Motor Control High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 1000 800 Conditions
DCR1374SBA18 DCR1374SBA16 DCR1374SBA14 DCR1374SBA12 DCR1374SBA10 DCR1374SBA08
Tvj = 0 to 125C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: MU140 (See Package Details for further information) Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1374SBA16 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
1/9
www.dynexsemi.com
DCR1374SBA
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2694 4230 3682 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1965 3086 2534 A A A
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2084 3275 2770 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1500 2350 1875 A A A
2/9
www.dynexsemi.com
DCR1374SBA
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Test Conditions 10ms half sine, Tcase = 125C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 125C VR = 0 Max. 40 8 x 106 50 12.5 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 40.0kN Double side Min. -55 36.0 Max. 0.013 0.021 0.034 0.003 0.006 135 125 125 44.0 Units CW CW CW CW CW C C C kN
(with mounting compound) Single side Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force
3/9
www.dynexsemi.com
DCR1374SBA
SURGE RATINGS
Symbol IRRM/IRRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125C To 67% VDRM, Tj = 125C From 67% VDRM to 4600A Repetitive 50Hz Min. Max. 150 1000 500 1000 Units mA V/s A/s A/s
Gate source 20V, 20, Non-repetitive tr 0.5s, Tj = 125C VT(TO) rT tgd Threshold voltage On-state slope resistance Delay time At Tvj = 125C At Tvj = 125C VD = 67% VDRM, gate source 30V, 15 tr = 0.5s, Tj = 25C tq Turn-off time IT = 800A, tp = 1ms, Tj =125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear IL IH Latching current Holding current Tj = 25C, VD = 10V Tj = 25C, VG-K =
-
0.92 0.119 1.5
V m ns
3001
s
-
350 175
mA mA
Note 1: Typical value
4/9
www.dynexsemi.com
DCR1374SBA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3 350 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
CURVES
8000 Measured under pulse conditions Tj = 125C 7000
5000
Instantaneous on-state current, IT - (A)
4000
5000 4000 3000 2000 1000 0 0.5
Mean power dissipation - (W)
6000
3000
2000
1000
d.c. Half wave 3 phase 6 phase 0 1000 2000 3000 Mean on-state current IT(AV) - (A) 4000
0
1.0 1.5 Instantaneous on-state voltage, VT - (V) 2.0
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
A = 0.4846543 B = 8.508026 x 10-5 C = 0.05408984 D = 1.863019 x 10-3 these values are valid for Tj = 125C for IT 500A to 8000A 5/9
Where
www.dynexsemi.com
DCR1374SBA
10000 Conditions: Tj = 125C IT = 800A VR = 100V tp = 1ms - Trapezoidal
100
Table gives pulse power PGM in Watts
Total stored charge QS - (C)
Gate trigger voltage, VGT - (V)
Pulse width Pulse frequency Hz s 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10 10ms 20 -
10 0W W 50 20 W
10 5W
W
1000 IT QS
1
Tj = 125C
U
dI/dt IRR 100 0.1 1.0 10 100
VGD
er Low
limi
Tj = 25C
r ppe
lim
it 9
t 5%
Tj = -40C
Region of certain triggering
5%
0.1 0.001
Rate of decay of on-state current dI/dt - (A/s)
0.01 0.1 1 Gate trigger current IGT - (A)
10
Fig.4 Stored charge
Fig.5 Gate characteristics
100
I2t = I2 x t 2
0.1
Peak half sine wave on-state current - (kA)
Anode side cooled
75
Thermal impedance - (C/W)
0.01
Double side cooled
50
8 7 6
I2t value - (A2s x 106)
0.001
Conduction
25
I2t 5 4
Effective thermal resistance Junction to case C/W Double side 0.0130 0.0141 0.0170 0.0200 Anode side 0.0210 0.0221 0.0250 0.0280 10 100
0
1 ms
10
1
2 3 45
10
3 20 30 50
d.c. Halfwave 3 phase 120 6 phase 60 0.0001 0.001 0.01
Cycles at 50Hz
0.1 1 Time - (s)
Duration
Fig.6 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125C) Fig.7 Maximum (limit) transient thermal impedance junction to case (C/W)
6/9
www.dynexsemi.com
DCR1374SBA
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6 x 2.1 approx (In both electrodes)
Cathode tab
Cathode O102 max O63 1
Gate
O63 1 O92 max
Anode
Nominal weight: 1100g Clamping force: 40kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: MU140
33.5 0.6
O1.5
7/9
www.dynexsemi.com
DCR1374SBA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4597-4 Issue No. 5.2 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/9
www.dynexsemi.com

▲Up To Search▲

Price & Availability of DCR1374SBA10

	To Download DCR1374SBA10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .